مؤتمر
Improvement of Performance and Data Retention Characteristics of Sub-50nm DRAM by HfSiON Gate Dielectric.
العنوان: | Improvement of Performance and Data Retention Characteristics of Sub-50nm DRAM by HfSiON Gate Dielectric. |
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المؤلفون: | Sangjin Hyun, Hye-Min Kim, Hye-Lan Lee, Kab-Jin Nam, Sug-Hun Hong, Dong-Chan Kim, Jihyun Kim, Soo-Ik Jang, In Sang Jeon, Sangbom Kang, Siyoung Choi, U-In Chung, Joo-Tae Moon, Byung-Il Ryu |
المصدر: | 2007 IEEE Symposium on VLSI Technology; 2007, p184-185, 2p |
قاعدة البيانات: | Complementary Index |
ردمك: | 9784900784031 |
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DOI: | 10.1109/VLSIT.2007.4339685 |