Improvement of Performance and Data Retention Characteristics of Sub-50nm DRAM by HfSiON Gate Dielectric.

التفاصيل البيبلوغرافية
العنوان: Improvement of Performance and Data Retention Characteristics of Sub-50nm DRAM by HfSiON Gate Dielectric.
المؤلفون: Sangjin Hyun, Hye-Min Kim, Hye-Lan Lee, Kab-Jin Nam, Sug-Hun Hong, Dong-Chan Kim, Jihyun Kim, Soo-Ik Jang, In Sang Jeon, Sangbom Kang, Siyoung Choi, U-In Chung, Joo-Tae Moon, Byung-Il Ryu
المصدر: 2007 IEEE Symposium on VLSI Technology; 2007, p184-185, 2p
قاعدة البيانات: Complementary Index
الوصف
ردمك:9784900784031
DOI:10.1109/VLSIT.2007.4339685