مؤتمر
An 8T SRAM cell with column-based dynamic supply voltage for bit-interleaving.
العنوان: | An 8T SRAM cell with column-based dynamic supply voltage for bit-interleaving. |
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المؤلفون: | Anh Tuan Do, Kiat Seng Yeo, Low, J.Y.S., Low, J.Y.L., Zhi Hui Kong |
المصدر: | 2010 IEEE Asia Pacific Conference on Circuits & Systems (APCCAS); 2010, p704-707, 4p |
قاعدة البيانات: | Complementary Index |
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