التفاصيل البيبلوغرافية
| العنوان: |
A Hybrid Dry-Wet Approach for Removal of a Dummy Polysilicon Gate in a Replacement Metal Gate Scheme |
| المؤلفون: |
Hwang, Guang Yaw, Liao, J.H., Tzou, S.F., Lin, Mark, Yeh, Autumn, Lou, David, Chen, Eason, Huang, Weien, Kamarthy, Gowri, Xu, Kai Dong, Athayde, Amulya |
| المصدر: |
Diffusion and Defect Data Part B: Solid State Phenomena; April 2012, Vol. 187 Issue: 1 p57-60, 4p |
| مستخلص: |
Beginning at the 45nm node, the semiconductor industry is moving to high-k gate dielectrics and metal gate electrodes for CMOS logic devices [. Although different approaches of building these devices are being pursued, most of the industry has consolidated behind a gate last approach, in which the transistor is built around a dummy poly polysilicon gate, which is subsequently removed and replaced with a metal gate. Current approaches to removing the dummy poly gate include plasma-based dry processes and liquid-phase wet etching. |
| قاعدة البيانات: |
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