دورية
Changes in InSb as a result of ion implantation
| العنوان: | Changes in InSb as a result of ion implantation |
|---|---|
| المؤلفون: | Shaanan, M., Kalish, R., Richter, V. |
| المصدر: | Nuclear Instruments and Methods in Physics Research Section B; March 1985, Vol. 7 Issue: 1 p443-447, 5p |
| مستخلص: | The structural and compositional changes which occur in InSb as a result of ion implantation have been studied. InSb samples were implanted with Cd (300 keV, 2 × 10 14cm −2) and B (20 keV, 7.5 × 10 15cm −2) ions at different temperatures (80–560 K). As a result of the implantation, swelling of the implanted layer was noticed. The step height due to this swelling was measured by interferometric methods, and the changes of composition by RBS, PIXE and Auger spectroscopy. The most severe swelling (up to 4200Å) is measured for 300 K Cd implantations. RBS shows a reduction in backscattering yield in the implanted region which is possibly caused by oxidation. PIXE and Auger measurements show that the implanted region is In-poor and O-rich. No swelling is detectable for B implantations. It is proposed that internal strain caused by agglomeration of defects is responsible for the oxidation and for the swelling. |
| قاعدة البيانات: | Supplemental Index |
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