دورية
Total dose measurements by p-channel transistors of ICs
| العنوان: | Total dose measurements by p-channel transistors of ICs |
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| المؤلفون: | Butin, V I, Butin, I V, Butina, A V |
| المصدر: | IOP Conference Series: Materials Science and Engineering; March 2019, Vol. 498 Issue: 1 p012007-012007, 1p |
| مستخلص: | In this paper, a new approach of p-channel MOS-transistors used for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for the MOSFETs electro-physical model of dose effects. We propose to calculate the total dose of ionization flux using the results of MOS-transistors drain current measurements, under a fixed gate and drain voltage. |
| قاعدة البيانات: | Supplemental Index |
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