التفاصيل البيبلوغرافية
| العنوان: |
Selectivity Tuning by Peroxide Concentration for the Selective Etching of SiGe20 to Si and SiGe40 to SiGe20 |
| المؤلفون: |
Lopez Villanueva, Francisco Javier, Sebaai, Farid, Altamirano-Sanchez, Efrain, Klipp, Andreas |
| المصدر: |
Diffusion and Defect Data Part B: Solid State Phenomena; August 2023, Vol. 346 Issue: 1 p29-33, 5p |
| مستخلص: |
Using two highly efficient inhibitors, one for silicon and one for SiO2 and SiN it is possible by varying the hydrogenperoxide concentration to achieve tuneable formulated chemistry concerning selectivity. So, the same formulation can be used for the selective etching of SiGe25 vs. Si like for GAA applications as well as for the selective etching of SiGe40 vs. SiGe20 like for CFET applications. |
| قاعدة البيانات: |
Supplemental Index |
