Combined AFM and laser lithography on hydrogen-passivated amorphous silicon

التفاصيل البيبلوغرافية
العنوان: Combined AFM and laser lithography on hydrogen-passivated amorphous silicon
المؤلفون: Birkelund, Karen, Mu¨llenborn, Matthias, Grey, Franc¸ois, Jensen, Flemming, Madsen, Steen
المصدر: Superlattices and Microstructures; December, 1996, Vol. 20 Issue: 4 p555-560, 6p
مستخلص: We report a novel combination of AFM lithography and laser direct writing on hydrogen-passivated amorphous silicon surfaces to fabricate combined silicon milli-, micro- and nanostructures. Selective oxidation is performed by focusing a laser beam (λ=458 nm) on a hydrogen-terminated silicon surface, forming the millimetre-size contact pads for connection of nanometre-scale patterns. The nanostructures are made by electric-field-enhanced oxidation using a contact mode AFM equipped with a metal-coated tip. Both techniques are based on selective oxidation of hydrogen-passivated amorphous silicon, where the oxide is used as an etch mask in a single etch step. The lithographic process has also been demonstrated using a reflection mode scanning near-field optical microscope with an uncoated fiber probe.
قاعدة البيانات: Supplemental Index
الوصف
تدمد:07496036
10963677
DOI:10.1006/spmi.1996.0114