Fabrication and characterization of ReO3-type dielectric films
| العنوان: | Fabrication and characterization of ReO3-type dielectric films |
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| المؤلفون: | Masanori Kodera, Takao Shimizu, Hiroshi Funakubo, Ayako Taguchi, Hiroki Moriwake |
| المصدر: | Journal of Materials Chemistry C. 8:4680-4684 |
| بيانات النشر: | Royal Society of Chemistry (RSC), 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Fabrication, Materials science, business.industry, Band gap, Hydrothermal treatment, General Chemistry, Dielectric, Characterization (materials science), visual_art, Electronic component, Materials Chemistry, visual_art.visual_art_medium, Optoelectronics, Thin film, business |
| الوصف: | ReO3-type NbO2F and TaO2F thin films were synthesized using HF vapor oxidation during hydrothermal treatment and their dielectric properties were investigated. It was confirmed for the first time that these ReO3-type oxyfluoride thin films can function as dielectric materials, as demonstrated both theoretically and experimentally. NbO2F and TaO2F thin films exhibited relatively high dielectric constants of 80 and 60 at 1 MHz, respectively. This new ReO3-type family of films is promising for the preparation of dielectric materials that can be utilized for improving electronic components. Moreover, our results provide a new strategy to improve dielectric constants without reducing bandgap energy. |
| تدمد: | 2050-7534 2050-7526 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::0214b988f87cdaed019f3cfb430112a9 https://doi.org/10.1039/d0tc00821d |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........0214b988f87cdaed019f3cfb430112a9 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20507534 20507526 |
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