Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition
| العنوان: | Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition |
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| المؤلفون: | L. X. Qian, Tianjun Dai, Yixuan Ren, Xingzhao Liu |
| المصدر: | Journal of Electronic Materials. 47:6709-6715 |
| بيانات النشر: | Springer Science and Business Media LLC, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, Equivalent oxide thickness, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Molybdenum hexacarbonyl, Electronic, Optical and Magnetic Materials, Amorphous solid, Atomic layer deposition, chemistry.chemical_compound, chemistry, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Thin film, 0210 nano-technology, Molybdenum disulfide |
| الوصف: | Molybdenum oxide (MoO3) thin films have been deposited using plasma-enhanced atomic layer deposition with molybdenum hexacarbonyl (Mo(CO)6) and oxygen plasma. Self-limiting growth was verified at a deposition temperature of 162°C and the growth rate was determined to be 0.76 A/cycle. It was found that the as-deposited amorphous thin films crystallized into β- or α-MoO3 during annealing temperatures from 300°C to 400°C in air. In addition, the optical bandgap (Eg) of the amorphous MoO3 was estimated to be 4 eV by transmittance spectral analysis. Moreover, metal-insulator–semiconductor capacitors based on p-type (100) silicon substrates were fabricated to investigate the electrical properties of MoO3. It was shown that the MoO3 thin films exhibit a good dielectric performance and that the dielectric constant of the amorphous MoO3 was determined to be about 17. Additionally, a low leakage current of 6.43 × 10−7 A/cm2 at 1 V was detected and the equivalent oxide thickness was calculated to be 10.5 nm. As a result, MoO3 thin films, as a new high-κ gate dielectrics system, might be a good candidate for metal-insulator–semiconductor field-effect transistors based on two-dimensional transition metal dichalcogenides, especially for metal oxide semiconductor field-effect transistors using molybdenum disulfide (MoS2) as channel material. |
| تدمد: | 1543-186X 0361-5235 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::08bf40ce5f599661030f7da50f991fb7 https://doi.org/10.1007/s11664-018-6555-4 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........08bf40ce5f599661030f7da50f991fb7 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1543186X 03615235 |
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