Influence of Ag Layer Location on the Performance of Cu2ZnSnS4 Thin Film Solar Cells
| العنوان: | Influence of Ag Layer Location on the Performance of Cu2ZnSnS4 Thin Film Solar Cells |
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| المؤلفون: | Abuduwayiti Aierken, Xiaole Ma, Liu Xinxing, Ruiting Hao, Kang Gu, Yong Li, Shuaihui Sun, Bin Liu, Jie Guo, Guoshuai Wei, Faran Chang, Lu Wang |
| المصدر: | Journal of Electronic Materials. 49:1819-1826 |
| بيانات النشر: | Springer Science and Business Media LLC, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Scanning electron microscope, Annealing (metallurgy), Open-circuit voltage, Analytical chemistry, 02 engineering and technology, Sputter deposition, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Grain size, Electronic, Optical and Magnetic Materials, X-ray photoelectron spectroscopy, Sputtering, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Thin film, 0210 nano-technology |
| الوصف: | In this work, the (Ag,Cu)2ZnSnS4 (ACZTS) thin films were fabricated via sputtering with a multi-target to form different layer stacks, i.e., (S1) ZnS/Sn/Cu/Ag/Mo,(S2) ZnS/Sn/Ag/Cu/Mo and (S3) ZnS/Ag/Sn/Cu/Mo. The stacked precursors were sulfurized through a soft annealing, followed by a two-step sulfurization in a chamber filled with N2 at standard atmospheric pressure. The x-ray photoelectron spectroscopy elemental profile showed a vertical non-uniform distribution of Ag in the film. Based on the results of scanning electron microscopy and electron probe microanalysis, Ag enrichment of the upper surface was beneficial for the grain size. Moreover, a dense, uniform surface could be obtained and the stability of the elemental composition could be maintained. After optimizing the order of the Ag layers, the efficiency of the solar cells increased from 1.30% to 3.65%, an improvement of 181%. The open circuit voltage is increased from 448 mV to 630 mV because of the reduced voids, increased grain size, and reduced CuZn antisite defects. |
| تدمد: | 1543-186X 0361-5235 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::1186a163cab8a0f7e136e00eec7286f6 https://doi.org/10.1007/s11664-019-07890-4 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........1186a163cab8a0f7e136e00eec7286f6 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1543186X 03615235 |
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