Characterization and Modeling of Transistor Variability in Advanced CMOS Technologies
| العنوان: | Characterization and Modeling of Transistor Variability in Advanced CMOS Technologies |
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| المؤلفون: | A. Bajolet, R. Di Frenza, Cecilia M. Mezzomo, Gerard Ghibaudo, Augustin Cathignol |
| المصدر: | IEEE Transactions on Electron Devices. 58:2235-2248 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2011. |
| سنة النشر: | 2011 |
| مصطلحات موضوعية: | Matching (statistics), Computer science, Transistor, Semiconductor device modeling, Electronic, Optical and Magnetic Materials, Characterization (materials science), Threshold voltage, law.invention, CMOS, law, Logic gate, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Electrical and Electronic Engineering |
| الوصف: | This paper aims at reviewing the results that we have obtained during the last ten years in the characterization and modeling of transistor mismatch in advanced complementary metal-oxide-semiconductor (CMOS) technologies. First, we review the theoretical background and modeling approaches that are generally employed for analyzing and interpreting the mismatch results. Next, we present the experimental procedures and methodologies that we used for characterizing the transistor matching. Then, we discuss typical matching results that were obtained on modern CMOS technologies and analyze the main variability (mismatch) sources. Finally, we conclude by summarizing our findings and giving some recommendations for future technologies. |
| تدمد: | 1557-9646 0018-9383 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::202c7b327db4d49b4699b1f38948ace2 https://doi.org/10.1109/ted.2011.2141140 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........202c7b327db4d49b4699b1f38948ace2 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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