Role of beam divergence and ion-to-molecule flux ratio in ion-beam-assisted deposition texturing of MgO

التفاصيل البيبلوغرافية
العنوان: Role of beam divergence and ion-to-molecule flux ratio in ion-beam-assisted deposition texturing of MgO
المؤلفون: Alp T. Findikoglu, Vladimir Matias, Paul M. te Riele, S. Kreiskott
المصدر: Journal of Materials Research. 19:501-504
بيانات النشر: Springer Science and Business Media LLC, 2004.
سنة النشر: 2004
مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Oxide, Condensed Matter Physics, Amorphous solid, chemistry.chemical_compound, Semiconductor, chemistry, Mechanics of Materials, General Materials Science, Texture (crystalline), Crystallite, Composite material, Thin film, business, Ion beam-assisted deposition, Beam divergence
الوصف: The effect of process conditions on the biaxial texture of MgO films grown by ion-beam-assisted deposition (IBAD) was studied. The texture showed a strong dependence on the Ar+/MgO flux ratio, but a weak dependence on the divergence of Ar+ beam. One hundred-nanometer-thick epi-MgO on less than 10-nm-thick textured IBAD-MgO films that were grown on 7-nm-thick Y2O3 layers on fused silica, metal alloy tape, and polished Si substrates showed biaxial texture with in- and out-of-plane orientation distributions of less than 4° and 2°, respectively. These results strengthen the notion that the IBAD technique could serve as a universal technological process to integrate amorphous and polycrystalline substrates with various oxide and semiconductor films that need to be grown with good biaxial texture.
تدمد: 2044-5326
0884-2914
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::26658832edf8eb1f5e9c23e6e45620b4
https://doi.org/10.1557/jmr.2004.19.2.501
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........26658832edf8eb1f5e9c23e6e45620b4
قاعدة البيانات: OpenAIRE