Role of beam divergence and ion-to-molecule flux ratio in ion-beam-assisted deposition texturing of MgO
العنوان: | Role of beam divergence and ion-to-molecule flux ratio in ion-beam-assisted deposition texturing of MgO |
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المؤلفون: | Alp T. Findikoglu, Vladimir Matias, Paul M. te Riele, S. Kreiskott |
المصدر: | Journal of Materials Research. 19:501-504 |
بيانات النشر: | Springer Science and Business Media LLC, 2004. |
سنة النشر: | 2004 |
مصطلحات موضوعية: | Materials science, business.industry, Mechanical Engineering, Oxide, Condensed Matter Physics, Amorphous solid, chemistry.chemical_compound, Semiconductor, chemistry, Mechanics of Materials, General Materials Science, Texture (crystalline), Crystallite, Composite material, Thin film, business, Ion beam-assisted deposition, Beam divergence |
الوصف: | The effect of process conditions on the biaxial texture of MgO films grown by ion-beam-assisted deposition (IBAD) was studied. The texture showed a strong dependence on the Ar+/MgO flux ratio, but a weak dependence on the divergence of Ar+ beam. One hundred-nanometer-thick epi-MgO on less than 10-nm-thick textured IBAD-MgO films that were grown on 7-nm-thick Y2O3 layers on fused silica, metal alloy tape, and polished Si substrates showed biaxial texture with in- and out-of-plane orientation distributions of less than 4° and 2°, respectively. These results strengthen the notion that the IBAD technique could serve as a universal technological process to integrate amorphous and polycrystalline substrates with various oxide and semiconductor films that need to be grown with good biaxial texture. |
تدمد: | 2044-5326 0884-2914 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::26658832edf8eb1f5e9c23e6e45620b4 https://doi.org/10.1557/jmr.2004.19.2.501 |
حقوق: | CLOSED |
رقم الأكسشن: | edsair.doi...........26658832edf8eb1f5e9c23e6e45620b4 |
قاعدة البيانات: | OpenAIRE |
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