التفاصيل البيبلوغرافية
العنوان:
A 10 Gbit/s Si CMOS transimpedence amplifier with an integrated MS photodetector for optical interconnections
المؤلفون:
April S. Brown , Daeik Daniel Kim , Indal Song , Seok-Hun Hyun , Nan Marie Jokerst , Sang-Woo Seo , Martin A. Brooke , Sa Huang
المصدر:
The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004. .
بيانات النشر:
IEEE, 2004.
سنة النشر:
2004
مصطلحات موضوعية:
Transimpedance amplifier , Materials science , Preamplifier , business.industry , Amplifier , Electrical engineering , Photodetector , Gallium arsenide , chemistry.chemical_compound , CMOS , chemistry , Gigabit , Optoelectronics , Wideband , business
الوصف:
A wideband preamplifier is designed and fabricated using a 0.18 /spl mu/m CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.
URL الوصول:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c71d0a44d7b2784306d6831b82e5188 https://doi.org/10.1109/leos.2004.1363340
رقم الأكسشن:
edsair.doi...........2c71d0a44d7b2784306d6831b82e5188
قاعدة البيانات:
OpenAIRE
