Micromachined 50 GHz/60 GHz Phi filters by CMOS compatible ICP deep trench technology
| العنوان: | Micromachined 50 GHz/60 GHz Phi filters by CMOS compatible ICP deep trench technology |
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| المؤلفون: | Pen-Li Huang, Guo-Wei Huang, Tao Wang, Yo-Sheng Lin, Shey-Shi Lu, Yu-Ming Teng |
| المصدر: | Microwave and Optical Technology Letters. 50:3142-3146 |
| بيانات النشر: | Wiley, 2008. |
| سنة النشر: | 2008 |
| مصطلحات موضوعية: | Materials science, business.industry, Electrical engineering, Substrate (electronics), Condensed Matter Physics, Inductor, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, CMOS, Parasitic capacitance, Filter (video), Etching (microfabrication), Extremely high frequency, Optoelectronics, Electrical and Electronic Engineering, business, Microwave |
| الوصف: | Micromachined 50 and 60 GHz millimeter-wave filters were implemented by using a 0.18 μm CMOS technology. The CMOS-compatible inductively coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filters completely, and so the substrate loss of the filters can be significantly reduced. The results show that 3.2, 2.6, and 2.1 dB improvements in S11, S21, and GAmax, respectively, are achieved for the 60 GHz filter after the backside ICP etching. Besides, for the 50 GHz filter, a 295.8% (from 9.6 to 38) improvement in Q-factor of its inductors is achieved. These results show that the backside ICP etching is effective to reduce the substrate loss and parasitic capacitance in the millimeter-wave frequency bands, and hence is very promising for millimeter-wave CMOS RFIC applications. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 3142–3146, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23915 |
| تدمد: | 1098-2760 0895-2477 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::4e39ab719381735fe7ca40bef90b5375 https://doi.org/10.1002/mop.23915 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........4e39ab719381735fe7ca40bef90b5375 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10982760 08952477 |
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