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Plasma enhanced atomic layer deposition of textured aluminum nitride on platinized substrates for MEMS

التفاصيل البيبلوغرافية
العنوان: Plasma enhanced atomic layer deposition of textured aluminum nitride on platinized substrates for MEMS
المؤلفون: Nicholas A. Strnad, Wendy L. Sarney, Gilbert B. Rayner, Robert R. Benoit, Glen R. Fox, Ryan Q. Rudy, Thomas J. Larrabee, Jeffrey Shallenberger, Jeffrey S. Pulskamp
المصدر: Journal of Vacuum Science & Technology A. 40:042403
بيانات النشر: American Vacuum Society, 2022.
سنة النشر: 2022
مصطلحات موضوعية: Surfaces and Interfaces, Condensed Matter Physics, Surfaces, Coatings and Films
الوصف: We demonstrate an N2 plasma-enhanced process for inducing (0001)-oriented ALD-grown AlN on planar substrates. We evaluate the impact of {111}-textured Pt as a growth template, precursor chemistry, dose time, stress-engineered substrates, inductively coupled plasma conditions for film bombardment during growth, and ALD equipment configurations. The thin film transverse piezoelectric coefficient e31,f determined from measurements on microelectromechanical system cantilevers coated by PEALD AlN is reported to be −0.53 ± 0.03 C/m2. An analysis of the Pt-AlN interface properties based primarily on depth-profile x-ray photoemission spectroscopy and transmission electron microscopy-energy dispersive spectra is presented. Other than the c axis wurtzite (0001) diffraction peak, no other AlN peaks were observed above the detection limits for XRD measurements. The XRD rocking-curve full-width half-maximum of the 0001 peaks was 2.9° omega, which was achieved on {111}-textured Pt. The relative dielectric constant was measured to be 8.1 −6 A/cm2 over the applied field range of ±1820 kV/cm.
تدمد: 1520-8559
0734-2101
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4f80616aa4c404301013ee831f7a96ea
https://doi.org/10.1116/6.0001633
رقم الأكسشن: edsair.doi...........4f80616aa4c404301013ee831f7a96ea
قاعدة البيانات: OpenAIRE
الوصف
تدمد:15208559
07342101