Magnetic tunnel transistors (MTTs) with double tunnel junctions were prepared in order to investigate the emitter voltage dependence of a magneto-current (MC). A three-terminal structure was fabricated, using metal shadow masks. It was observed that hot electrons contributed to a collector current. A transfer ratio of over 10-3 was obtained in an MTT with double tunnel junctions. The MC decreased gradually with increasing emitter voltage. The emitter voltage at which the MC decreased to half its original value was over 1.5 V.
