Morphological and Electrical Properties of β-Ga2O3/4H-SiC Heterojunction Diodes
| العنوان: | Morphological and Electrical Properties of β-Ga2O3/4H-SiC Heterojunction Diodes |
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| المؤلفون: | Young-Jae Lee, Michael A. Schweitz, Dong-Wook Byun, Jong-Min Oh, Sang-Mo Koo |
| المصدر: | Electronic Materials Letters. 17:479-484 |
| بيانات النشر: | Springer Science and Business Media LLC, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, Scanning electron microscope, Analytical chemistry, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Grain size, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Threshold voltage, Crystal, Sputtering, Hall effect, Thin film, 0210 nano-technology, Current density |
| الوصف: | s-Ga2O3/4H-SiC heterojunction diodes were fabricated by depositing β-Ga2O3 thin films on 4H-SiC substrates using radio frequency sputtering. X-ray diffraction (XRD) analysis revealed increased reflectivity of β-Ga2O3 ( $$\overline{4 }$$ 02), ( $$\overline{2 }$$ 02) and ( $$\overline{6 }$$ 03) crystal planes with optimized sputtering power. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were performed to confirm grain size and distribution. The Hall mobility (30.16 cm2/V $$\bullet$$ s) and carrier concentration (3.14 $$\times$$ 1014 cm–3) showed with large and homogeneous grain distribution thin films. For these thin films, mobility and carrier concentration value could improve up to 9% and 55%. The effect of these electrical characteristics was ascribed to reduction of the grain boundary scattering. The I–V characteristics along with Hall measurement of the heterojunction diode suggest that the improvement in the threshold voltage and current density is caused by a substantial enhancement in charge carrier mobility. |
| تدمد: | 2093-6788 1738-8090 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::65eda1415c44231e762d66ea7ca080ad https://doi.org/10.1007/s13391-021-00297-6 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........65eda1415c44231e762d66ea7ca080ad |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 20936788 17388090 |
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