Here we report the 1.3-μm electrical injection lasers based on the InAs/GaAs quantum dot (QD) grown on GaAs substrate, which can steadily work at 110℃ without visible degradation. The QD structure is designed by applying the Stranski-Krastanow growth mode of solid source molecular beam epitaxy. The density of InAs quantum dots in the active region is increased from 3.8×1010 cm -2 to 5.9×1010 cm -2. For lasers performance, the maximum output power of devices with low density quantum dots as active region is 650mW at room temperature, and that of devices with high density is 1030mW. Meanwhile the output power of high density device is 131 mW under the injection current of 4 A at 110℃.
