التفاصيل البيبلوغرافية
| العنوان: |
DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess |
| المؤلفون: |
Hyun-Wook Jung, Hyung Sup Yoon, Seong-Il Kim, Kyu-Jun Cho, Sung-Jae Chang, Haecheon Kim, Jong-Won Lim, Jae-Won Do, Byoung-Gue Min, Jeong Jin Kim, Ho-Sang Kwon, Hokyun Ahn, Jin-Mo Yang |
| المصدر: |
ECS Journal of Solid State Science and Technology. 7:P197-P200 |
| بيانات النشر: |
The Electrochemical Society, 2018. |
| سنة النشر: |
2018 |
| مصطلحات موضوعية: |
010302 applied physics, Materials science, business.industry, Mode (statistics), chemistry.chemical_element, Algan gan, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, Fluorine, Optoelectronics, 0210 nano-technology, business |
| تدمد: |
2162-8777
2162-8769 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::84c1d261b53b6c7c36ac984959a6d94a
https://doi.org/10.1149/2.0181804jss |
| رقم الأكسشن: |
edsair.doi...........84c1d261b53b6c7c36ac984959a6d94a |
| قاعدة البيانات: |
OpenAIRE |
