Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures
| العنوان: | Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures |
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| المؤلفون: | Zhenghao Shen, Wenhui Xu, Yang Chen, Jiajie Lin, Yuhuan Xie, Kai Huang, Tiangui You, Genquan Han, Xin Ou |
| المصدر: | Science China Materials. 66:756-763 |
| بيانات النشر: | Springer Science and Business Media LLC, 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | General Materials Science |
| تدمد: | 2199-4501 2095-8226 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::88144ba3938f17705f8cd7ed292feda5 https://doi.org/10.1007/s40843-022-2187-2 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........88144ba3938f17705f8cd7ed292feda5 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 21994501 20958226 |
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