We present data measured using the wet bench in the prototyping line of IMEC. This wet bench has been running for 3 years an IMEC Clean for prediffusion cleans including the most critical one: the pre-gate oxidation clean. The clean was introduced at IMEC for the 0.35 /spl mu/m CMOS process and its use has been succesfully extended to the 180 nm and 130 nm CMOS modules presently developed at IMEC.
