Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors
| العنوان: | Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors |
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| المؤلفون: | Tiao Yuan Huang, Kuan Lin Yeh, Horng-Chih Lin, Rou Gu Huang, Ren Wei Tsai |
| المصدر: | Applied Physics Letters. 79:635-637 |
| بيانات النشر: | AIP Publishing, 2001. |
| سنة النشر: | 2001 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), business.industry, Schottky barrier, Transistor, Field strength, Thermal conduction, Metal–semiconductor junction, law.invention, Reverse leakage current, law, Thin-film transistor, Optoelectronics, business, Leakage (electronics) |
| الوصف: | Conduction mechanisms for the off-state leakage in Schottky barrier thin-film transistor were explored. It was found that the field-emission process dominates the leakage conduction of the device with the conventional structure as the field strength in the drain junction becomes high, and results in the strong gate-induced drain leakage (GIDL) like phenomenon. In contrast, for the device with a field-induced-drain structure, the high-field region is pulled away from the silicided drain. As a result, the field-emission conduction is eliminated, so the GIDL-like leakage current is effectively suppressed. |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::9c5ee82ce444503bf648a489bc126507 https://doi.org/10.1063/1.1390325 |
| رقم الأكسشن: | edsair.doi...........9c5ee82ce444503bf648a489bc126507 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
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