Formation of Highly Ordered Semiconducting Anthracene Monolayer Rigidly Connected to Insulating Alkanethiolate Thin Film

التفاصيل البيبلوغرافية
العنوان: Formation of Highly Ordered Semiconducting Anthracene Monolayer Rigidly Connected to Insulating Alkanethiolate Thin Film
المؤلفون: Hironori Tsunoyama, Toyoaki Eguchi, Naoyuki Hirata, Masahiro Shibuta, Atsushi Nakajima
المصدر: The Journal of Physical Chemistry C. 122:26080-26087
بيانات النشر: American Chemical Society (ACS), 2018.
سنة النشر: 2018
مصطلحات موضوعية: Anthracene, Materials science, Absorption spectroscopy, Band gap, Annealing (metallurgy), Scanning tunneling spectroscopy, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Nanoclusters, law.invention, chemistry.chemical_compound, Crystallography, General Energy, chemistry, law, Monolayer, Physical and Theoretical Chemistry, Scanning tunneling microscope, 0210 nano-technology
الوصف: The formation and molecular structure of a self-assembled monolayer (SAM) of anthracene-substituted alkanethiol on Au(111) have been investigated by scanning tunneling microscopy and infrared reflection absorption spectroscopy. A clean and well-ordered SAM composed of densely packed “standing-up” molecules is formed by a wet-chemical process in air, followed by thermal annealing in vacuum. In the SAM, anthracene moieties are arranged in a bulklike in-plane herringbone structure and keep their crystalline ordering above room temperature, which is in contrast to the less ordering in Au nanoclusters ligated by the anthracene-alkanethiolates. In addition, hexagonal arrangement of anthracene dimer is found on the surface of the SAM. These structures remain after annealing at 400 K. Scanning tunneling spectroscopy performed on the surface shows an energy gap of ∼3.6 eV, similar to the band gap of bulk anthracene. The above results demonstrate that the highly ordered semiconducting anthracene monolayer is succes...
تدمد: 1932-7455
1932-7447
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a9b029e8f3ef52ea4a73a7613b586ec7
https://doi.org/10.1021/acs.jpcc.8b08907
رقم الأكسشن: edsair.doi...........a9b029e8f3ef52ea4a73a7613b586ec7
قاعدة البيانات: OpenAIRE