Growth of polycrystalline Cdln2S4 on US films
| العنوان: | Growth of polycrystalline Cdln2S4 on US films |
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| المؤلفون: | S. B. Schujman, J. Saura, P. O. Vaccaro |
| المصدر: | Journal of Materials Science Letters. 12:553-554 |
| بيانات النشر: | Springer Science and Business Media LLC, 1993. |
| سنة النشر: | 1993 |
| مصطلحات موضوعية: | Materials science, Annealing (metallurgy), business.industry, Inorganic chemistry, Crystal growth, Electrical contacts, Sputtering, Optoelectronics, General Materials Science, Crystallite, Thin film, Inert gas, business, Ohmic contact |
| الوصف: | Electrical contacts are often been made by means of a thin In film deposited by several methods, including evaporation and sputtering. A common technique is the subsequent annealing of the system in an inert atmosphere in order to enhance In diffusion and promote the formation of ohmic contacts. The authors study such electrodes when heated above 400°C |
| تدمد: | 1573-4811 0261-8028 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b5c09734dc0827e2f390d5cb17dee264 https://doi.org/10.1007/bf00278321 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........b5c09734dc0827e2f390d5cb17dee264 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 15734811 02618028 |
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