Process and reliability risks have become critically important during mass production at advanced technology nodes even with Extreme Ultraviolet Lithography (EUV) illumination. In this work, we propose a design-for-manufacturability solution using a set of new rules to detect high risk design layout patterns. The proposed methods improve design margins while avoiding area overhead and complex design restrictions. In addition, the proposed method introduces an in-design pattern replacement with automatically generated fixing hints to improve all matched locations with identified patterns.
