The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors
| العنوان: | The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors |
|---|---|
| المؤلفون: | Kyu Jun Cho, Hyung Sup Yoon, Hokyun Ahn, Jung-Hee Lee, Ryun-Hwi Kim, Haecheon Kim, Ji-Heon Kim, Sung-Jae Chang, Jae-Won Do, Jin-Mo Yang, Jong-Won Lim, Min Jeong Shin, Byoung-Gue Min, Hyun-Wook Jung |
| المصدر: | Thin Solid Films. 628:31-35 |
| بيانات النشر: | Elsevier BV, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Materials science, Transconductance, Analytical chemistry, Gallium nitride, 02 engineering and technology, Surface finish, 01 natural sciences, law.invention, chemistry.chemical_compound, X-ray photoelectron spectroscopy, Saturation current, law, 0103 physical sciences, Materials Chemistry, 010302 applied physics, Tetramethylammonium hydroxide, business.industry, Transistor, Metals and Alloys, Heterojunction, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, 0210 nano-technology, business |
| الوصف: | AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide (TMAH) prior to gate metal deposition. Electrical characterizations show improved extrinsic transconductance and saturation current, as well as more uniform off-state behavior with reduced off-current by a factor of 3.5 and gate leakage current by a factor of 4.2 in the devices with TMAH treatment. The analyses based on atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy show that the TMAH treatment effectively reduces the roughness of the recess-etched AlGaN surface and removes the native oxide layer on the AlGaN surface, suggesting a simple and viable route towards the fabrication of gate-recessed HEMTs based on AlGaN/GaN heterostructure with improved controllability and uniformity. |
| تدمد: | 0040-6090 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::cc38158fc15b086825a2cfab84af99fb https://doi.org/10.1016/j.tsf.2017.02.053 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........cc38158fc15b086825a2cfab84af99fb |
| قاعدة البيانات: | OpenAIRE |
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