Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation
| العنوان: | Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation |
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| المؤلفون: | Yu-Bo Wang, Ting-Chang Chang, Shih-Kai Lin, Pei-Yu Wu, Yong-Ci Zhang, Yung-Fang Tan, Wen-Chung Chen, Chung-Wei Wu, Sheng-Yao Chou, Kuan-Ju Zhou, Li-Chuan Sun, Xin-Ying Tsai, Simon M. Sze |
| المصدر: | IEEE Transactions on Electron Devices. 69:6705-6709 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials |
| تدمد: | 1557-9646 0018-9383 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::d062390e041964907a9024a26a73ebbe https://doi.org/10.1109/ted.2022.3215932 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........d062390e041964907a9024a26a73ebbe |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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