High-Efficiency Photovoltaic Conversion at Selective Electron Tunneling Heterointerfaces

التفاصيل البيبلوغرافية
العنوان: High-Efficiency Photovoltaic Conversion at Selective Electron Tunneling Heterointerfaces
المؤلفون: Xinxi Li, Sheng Meng, Yao Gong, Wei Ma, Jianxin Guan, Chuancheng Jia, Chunhui Gu, Xuefeng Guo, Linan Meng
المصدر: Advanced Electronic Materials. 3:1700211
بيانات النشر: Wiley, 2017.
سنة النشر: 2017
مصطلحات موضوعية: Materials science, Graphene, business.industry, Schottky barrier, Photovoltaic system, 02 engineering and technology, Electron, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, law.invention, law, Photovoltaics, Optoelectronics, Photoelectric conversion, 0210 nano-technology, business, Ternary operation, Quantum tunnelling
الوصف: Effectively controlling photoinduced charge transport at the heterointerface is of crucial importance for improving the performance of photovoltaic devices. On the basis of an ipsilateral selective electron tunneling (ISET) mechanism, here this study investigates photoinduced charge transport and photovoltaic conversion at a simplified dye/single-layer graphene (SLG)/TiO2 ternary interface. With an amphiphilic Z907 molecule as the model dye, the photoexcited electrons in the dye can directly tunnel across SLG and be collected by the TiO2 layer with an efficiency of 96.23%, which guarantees a high-efficiency photoelectric conversion at the ISET-based heterointerface. More importantly, the intrinsic Schottky barrier and fast hole collection rate at the heterointerface lead to a high photovoltage, a large fill factor, and the good intense-light performance for photovoltaic conversion. Such an ISET-based heterointerface may offer a platform of designing and developing a novel class of photovoltaic devices with high efficiency.
تدمد: 2199-160X
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e476744083ca97df42e6a23e942e793e
https://doi.org/10.1002/aelm.201700211
حقوق: OPEN
رقم الأكسشن: edsair.doi...........e476744083ca97df42e6a23e942e793e
قاعدة البيانات: OpenAIRE