أعرض في EDS

Design and DC parameter extraction of the high linearity Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT

التفاصيل البيبلوغرافية
العنوان:	Design and DC parameter extraction of the high linearity Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT
المؤلفون:	Jianbo Song, Zhiqun Cheng, Jiayun Yin, Zhihong Feng, Qingna Wang
المصدر:	2011 International Conference on Electronics, Communications and Control (ICECC).
بيانات النشر:	IEEE, 2011.
سنة النشر:	2011
مصطلحات موضوعية:	Materials science, business.industry, Extraction (chemistry), Doping, Gate length, Wide-bandgap semiconductor, Linearity, Gallium nitride, High-electron-mobility transistor, chemistry.chemical_compound, chemistry, Logic gate, Optoelectronics, business
الوصف:	DC parameter extraction of a novel high linearity Al 0.27 Ga 0.73 N/AlN/ Al 0.04 Ga 0.96 N/GaN HEMT with composited-layer and unintentionally doping barrier is presented. The devices with gate length of 0.3µm and T-shaped gate width of 1000µm are designed and fabricated. EEHEMT1 model is adapted to DC parameter extraction by using software of ICCAP. Comparison between measured results and simulated results shows extracting parameters of EEHEMT1 model are in good agreement with measured results.
URL الوصول:	https://explore.openaire.eu/search/publication?articleId=doi_________::ece3f7d9af9903d80c356c75e32ae046 https://doi.org/10.1109/icecc.2011.6067853
رقم الأكسشن:	edsair.doi...........ece3f7d9af9903d80c356c75e32ae046
قاعدة البيانات:	OpenAIRE

الوصف
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