Advanced atomic layer deposition: metal oxide thin film growth using the discrete feeding method

التفاصيل البيبلوغرافية
العنوان: Advanced atomic layer deposition: metal oxide thin film growth using the discrete feeding method
المؤلفون: Jae Chan Park, Chang Ik Choi, Sang-Gil Lee, Seung Jo Yoo, Ji-Hyun Lee, Jae Hyuck Jang, Woo-Hee Kim, Ji-Hoon Ahn, Jeong Hwan Kim, Tae Joo Park
المصدر: Journal of Materials Chemistry C. 11:1298-1303
بيانات النشر: Royal Society of Chemistry (RSC), 2023.
سنة النشر: 2023
مصطلحات موضوعية: Materials Chemistry, General Chemistry
الوصف: A HfO2 film was grown using discrete feeding ALD, an advanced ALD process designed to improve the surface coverage of the precursor, which decreased the residual impurities in the film and increased the film density.
تدمد: 2050-7534
2050-7526
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::eec33e7b0762b19649ddf2b074826ebe
https://doi.org/10.1039/d2tc03485a
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........eec33e7b0762b19649ddf2b074826ebe
قاعدة البيانات: OpenAIRE