p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices
العنوان: | p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices |
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المؤلفون: | Yongzhe Zhang, Wenjie Deng, Congya You, Songyu Li, Nabonswende Aida Nadege Ouedraogo, Yang Ma, Famin Liu |
المصدر: | Nano Research. 15:123-144 |
بيانات النشر: | Springer Science and Business Media LLC, 2021. |
سنة النشر: | 2021 |
مصطلحات موضوعية: | Materials science, Future studies, Interface engineering, business.industry, Intercalation (chemistry), Doping, Dielectric, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Transition metal, Modulation, Optoelectronics, General Materials Science, Electronics, Electrical and Electronic Engineering, business |
الوصف: | Two-dimensional layered transition metal dichalcogenides (TMDCs) have demonstrated a huge potential in the broad fields of optoelectronic devices, logic electronics, electronic integration, as well as neural networks. To take full advantage of TMDC characteristics and efficiently design the device structures, one of the most key processes is to control their p-/n-type modulation. In this review, we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring, substitutional doping, surface charge transfer, chemical intercalation, electrostatic modulation, and dielectric interface engineering. The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics. Finally, challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies. |
تدمد: | 1998-0000 1998-0124 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::f30a6ae3397b50e8283f00be389f809d https://doi.org/10.1007/s12274-021-3500-2 |
حقوق: | CLOSED |
رقم الأكسشن: | edsair.doi...........f30a6ae3397b50e8283f00be389f809d |
قاعدة البيانات: | OpenAIRE |
تدمد: | 19980000 19980124 |
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