The worst stress condition of hot carrier degradation on high voltage LDMOSFET
العنوان: | The worst stress condition of hot carrier degradation on high voltage LDMOSFET |
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المؤلفون: | Song Yongliang, Venson Chang, Jeff Wu, Atman Zhao Yong, Lisa Yu Yanju, Sarah Zhou Huayang, Kary Chien, Zhuo Song |
المصدر: | Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). |
بيانات النشر: | IEEE, 2013. |
سنة النشر: | 2013 |
مصطلحات موضوعية: | Engineering, Stress effects, Gate oxide, business.industry, MOSFET, Failure mechanism, High voltage, Stress conditions, Hot carrier reliability, business, Hot carrier degradation, Reliability engineering |
الوصف: | This paper reports the research of applying the worst stress condition of thick gate oxide LDMOSFET hot carrier reliability. Based on electrical characteristic and hot carrier degradation investigation, the worst stress condition selection and failure mechanism are discussed and then the reasonable stress condition is proposed in this paper. |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::fec0e366f8f187acea6cef5a9913d9fb https://doi.org/10.1109/ipfa.2013.6599255 |
رقم الأكسشن: | edsair.doi...........fec0e366f8f187acea6cef5a9913d9fb |
قاعدة البيانات: | OpenAIRE |
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