A 20 MHz On-Chip All-NMOS 3-Level DC–DC Converter With Interception Coupling Dead-Time Control and 3-Switch Bootstrap Gate Driver
| العنوان: | A 20 MHz On-Chip All-NMOS 3-Level DC–DC Converter With Interception Coupling Dead-Time Control and 3-Switch Bootstrap Gate Driver |
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| المؤلفون: | D. Brian Ma, Bumkil Lee |
| المصدر: | IEEE Transactions on Industrial Electronics. 68:6339-6347 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Maximum power principle, Computer science, business.industry, 020208 electrical & electronic engineering, Electrical engineering, 02 engineering and technology, Integrated circuit, Power (physics), law.invention, Control and Systems Engineering, law, Logic gate, 0202 electrical engineering, electronic engineering, information engineering, Gate driver, Electrical and Electronic Engineering, business, NMOS logic, Voltage, Power density |
| الوصف: | In mobile applications, power density highly affects mobility, cost, form factor, and battery time. To improve power density, high switching frequency operation is highly desirable for a power converter. However, with high switching frequency, switching power loss increases significantly, compromising efficiency and battery time. This article presents an on-chip 3-level DC–DC converter, using all NMOS devices as power switches, which reduces switching power loss and silicon cost. To facilitate the all-NMOS power stage operation and enhance the robustness to input supply variation, a 3-switch boost-strap gate driver is designed. Meanwhile, an interception coupling dead-time (ICDT) control is introduced to minimize dead-time related power loss. An integrated circuit prototype was fabricated using a 0.35 μm CMOS process. Robustly working with a variable input voltage from 3 to 6 V, it regulates a programmable power output from 0.4 to 1.6 V, with a maximum power efficiency of 85.5% over a full power range of 800 mW and a maximum power density of 1.07 W/mm2. Thanks to the ICDT control, it achieves a 0.5 ns dead-time over a full-load range of 500 mA. |
| تدمد: | 1557-9948 0278-0046 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::ff9cb74abd4c9d3e28bc09136acb63bc https://doi.org/10.1109/tie.2020.2996148 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........ff9cb74abd4c9d3e28bc09136acb63bc |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579948 02780046 |
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