Integration of GaN analog building blocks on p-GaN wafers for GaN ICs
| العنوان: | Integration of GaN analog building blocks on p-GaN wafers for GaN ICs |
|---|---|
| المؤلفون: | Guido Groeseneken, Hu Liang, Nooshin Amirifar, Shuzhen You, Ming Zhao, Stefaan Decoutere, Xiangdong Li, Karen Geens, Niels Posthuma |
| المصدر: | Journal of Semiconductors. 42:024103 |
| بيانات النشر: | IOP Publishing, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Comparator, Computer science, Hardware_PERFORMANCEANDRELIABILITY, High-electron-mobility transistor, 01 natural sciences, law.invention, undervoltage lockout (UVLO), law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, Power semiconductor device, Wafer, Electrical and Electronic Engineering, 010302 applied physics, Science & Technology, p-GaN, business.industry, Physics, Electrical engineering, GaN ICs, Condensed Matter Physics, resistor-transistor logic (RTL), Electronic, Optical and Magnetic Materials, Undervoltage-lockout, Physics, Condensed Matter, Physical Sciences, Resistor, business, comparator, Hardware_LOGICDESIGN |
| الوصف: | We demonstrate the key module of comparators in GaN ICs, based on resistor-transistor logic (RTL) on E-mode wafers in this work. The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor as the load. The function of the RTL comparators is finally verified by a undervoltage lockout (UVLO) circuit. The compatibility of this circuit with the current p-GaN technology paves the way for integrating logic ICs together with the power devices. |
| تدمد: | 2058-6140 1674-4926 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c0a04a1acd8c07ef73f757f709877df https://doi.org/10.1088/1674-4926/42/2/024103 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....1c0a04a1acd8c07ef73f757f709877df |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20586140 16744926 |
|---|