High Mobility Two-Dimensional Bismuth Oxyselenide Single Crystals with Large Grain Size Grown by Reverse-Flow Chemical Vapor Deposition
| العنوان: | High Mobility Two-Dimensional Bismuth Oxyselenide Single Crystals with Large Grain Size Grown by Reverse-Flow Chemical Vapor Deposition |
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| المؤلفون: | Yansong Fan, Zhihong Zhu, Yuwen He, Zongqi Bai, Guang Wang, Kostya S. Novoselov, Mengjian Zhu, Xi Yang, Yingchao Song, Shiqiao Qin, Gang Peng, Qi Zhang, Qing Luo |
| المصدر: | ACS Applied Materials & Interfaces. 13:49153-49162 |
| بيانات النشر: | American Chemical Society (ACS), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Electron mobility, Materials science, business.industry, Nucleation, chemistry.chemical_element, Chemical vapor deposition, Grain size, Bismuth, Semiconductor, Nanoelectronics, chemistry, Optoelectronics, General Materials Science, Field-effect transistor, business |
| الوصف: | 2D semiconductors with atomically thin body thickness have attracted tremendous research interest for high-performance nanoelectronics and optoelectronics. Most of the 2D semiconductors grown by chemical vapor deposition (CVD) methods suffer from rather low carrier mobility, small single-crystal size, and instability under ambient conditions. Here, we develop an improved CVD method with controllable reverse-gas flow to realize the direct growth of quality Bi2O2Se 2D single crystals on a mica substrate. The applied reverse flow significantly suppresses the random nucleation and thus promotes the lateral size of 2D Bi2O2Se crystals up to ∼750 μm. The Bi2O2Se field-effect transistors display high-room-temperature electron mobility up to ∼1400 cm2·V-1·s-1 and a well-defined drain current saturation. The on/off ratio of the Bi2O2Se transistor is larger than 107, and the sub-threshold swing is about 90 mV·dec-1. The responsivity, response time, and detectivity of Bi2O2Se photodetectors approach up to 60 A·W-1, 5 ms, and 2.4 × 1010 Jones at room temperature, respectively. Our results demonstrate large-size and high-quality Bi2O2Se grown by reverse-flow CVD as a high-performance channel material for next-generation transistors and photodetectors. |
| تدمد: | 1944-8252 1944-8244 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5137772317e38fb7175ae7885480c474 https://doi.org/10.1021/acsami.1c13491 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....5137772317e38fb7175ae7885480c474 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 19448252 19448244 |
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