Hot wire chemical vapor deposition for silicon photonics: An emerging industrial application opportunity
العنوان: | Hot wire chemical vapor deposition for silicon photonics: An emerging industrial application opportunity |
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المؤلفون: | T. Dominguez Bucio, Stuart A. Boden, Rafidah Petra, Swe Zin Oo, Ali Z. Khokhar, Harold M. H. Chong, Antulio Tarazona, Frederic Y. Gardes, Graham T. Reed |
المصدر: | Thin Solid Films. 676:26-30 |
بيانات النشر: | Elsevier BV, 2019. |
سنة النشر: | 2019 |
مصطلحات موضوعية: | 010302 applied physics, Materials science, Fabrication, Silicon photonics, business.industry, Metals and Alloys, 02 engineering and technology, Surfaces and Interfaces, Chemical vapor deposition, 021001 nanoscience & nanotechnology, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Silicon nitride, chemistry, Interference (communication), Plasma-enhanced chemical vapor deposition, 0103 physical sciences, Materials Chemistry, Optoelectronics, Deposition (phase transition), Hydrogen concentration, 0210 nano-technology, business |
الوصف: | In this work different silicon photonic devices, including straight waveguides, multi-mode interference devices and Mach-Zehnder interferometers, were fabricated and characterized on hot-wire chemical vapor deposition (HWCVD) silicon nitride (SiN) layers deposited at temperatures below 350 °C. These layers presented a hydrogen concentration of 13.1%, which is lower than that achieved with plasma enhanced chemical vapor deposition at these deposition temperatures. The lowest reported optical propagation losses of 6.1 dB/cm and 5.7 dB/cm, 1550 nm and 1310 respectively, for straight SiN waveguides prepared by HWCVD was measured. We demonstrated that silicon nitride SiN, prepared using HWCVD, is a viable material for silicon photonics fabrication. |
وصف الملف: | text; spreadsheet |
تدمد: | 0040-6090 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7978be74823df055d748bfd5bf577778 https://doi.org/10.1016/j.tsf.2019.02.048 |
حقوق: | OPEN |
رقم الأكسشن: | edsair.doi.dedup.....7978be74823df055d748bfd5bf577778 |
قاعدة البيانات: | OpenAIRE |
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