A CMOS Data Transfer System Based on Planar RF Coupling for Reinforced Galvanic Isolation with 25-kV Surge Voltage and 250-kV/µs CMTI
| العنوان: | A CMOS Data Transfer System Based on Planar RF Coupling for Reinforced Galvanic Isolation with 25-kV Surge Voltage and 250-kV/µs CMTI |
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| المؤلفون: | Giuseppe Palmisano, Egidio Ragonese, Alessandro Parisi, Nunzio Spina |
| المصدر: | Electronics, Vol 9, Iss 943, p 943 (2020) Electronics Volume 9 Issue 6 |
| بيانات النشر: | MDPI AG, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | package, wide-bandgap power semiconductors, Materials science, Computer Networks and Communications, surge voltage, lcsh:TK7800-8360, Gallium nitride, 02 engineering and technology, Integrated circuit, law.invention, galvanic isolation, chemistry.chemical_compound, Package, law, 0202 electrical engineering, electronic engineering, information engineering, Common-mode signal, on-chip inductors, Electrical and Electronic Engineering, Wide-bandgap power semiconductors, business.industry, 020208 electrical & electronic engineering, Transistor, lcsh:Electronics, CMOS technology, electromagnetic coupling, chemistry, CMOS, Hardware and Architecture, Control and Systems Engineering, Signal Processing, Optoelectronics, Radio frequency, Transient (oscillation), business, Galvanic isolation, integrated circuits |
| الوصف: | This paper exploits an effective approach to overcome the breakdown limitations of traditional galvanic isolators based on chip-scale isolation barriers, thus achieving a very high isolation rating (i.e., compliant with the reinforced isolation requirements). Such an approach is based on radio frequency (RF) planar coupling between two side-by-side co-packaged chips. Standard packaging along with proper assembling techniques can be profitably used to go beyond 20-kV surge voltage without using expensive or exotic isolation components. As a proof of concept, a bidirectional data transfer system based on RF planar coupling able to withstand an isolation rating as high as 25 kV has been designed in a low-cost standard 0.35-µ m CMOS technology. Experimental measurements demonstrated a maximum data rate of 40 Mbit/s using a carrier frequency of about 1 GHz. The adopted approach also guarantees a common mode transient immunity (CMTI) of 250 kV/µ s, which is a firstrate performance in view of next generation galvanic isolators for wide-bandgap power semiconductor devices, such as gallium nitride high-electron mobility transistors (GaN HEMTs) and silicon carbide (SiC) MOSFETs. |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 2079-9292 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ffb030ea1eb65928f1a353a6c8e68fc https://www.mdpi.com/2079-9292/9/6/943 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....7ffb030ea1eb65928f1a353a6c8e68fc |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20799292 |
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