Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films
| العنوان: | Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films |
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| المؤلفون: | K. Shubhakar, S. Mei, Michel Bosman, Nagarajan Raghavan, K. L. Pey, Sean J. O’Shea, A. Ranjan |
| المصدر: | Scientific Reports, Vol 8, Iss 1, Pp 1-9 (2018) Scientific Reports |
| بيانات النشر: | Nature Publishing Group, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | Materials science, Oxide, lcsh:Medicine, Hexagonal boron nitride, 02 engineering and technology, Dielectric, 01 natural sciences, Noise (electronics), Article, chemistry.chemical_compound, 0103 physical sciences, lcsh:Science, Electrical conductor, 010302 applied physics, Multidisciplinary, business.industry, lcsh:R, Conductive atomic force microscopy, 021001 nanoscience & nanotechnology, Resistive random-access memory, Power (physics), chemistry, Optoelectronics, lcsh:Q, 0210 nano-technology, business |
| الوصف: | This study investigates the resistive switching characteristics and underlying mechanism in 2D layered hexagonal boron nitride (h-BN) dielectric films using conductive atomic force microscopy. A combination of bipolar and threshold resistive switching is observed consistently on multi-layer h-BN/Cu stacks in the low power regime with current compliance (I comp ) of less than 100 nA. Standard random telegraph noise signatures were observed in the low resistance state (LRS), similar to the trends in oxygen vacancy-based RRAM devices. While h-BN appears to be a good candidate in terms of switching performance and endurance, it performs poorly in terms of retention lifetime due to the self-recovery of LRS state (similar to recovery of soft breakdown in oxide-based dielectrics) that is consistently observed at all locations without requiring any change in the voltage polarity for I comp ~1–100 nA. |
| اللغة: | English |
| تدمد: | 2045-2322 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::905dd7b648aab2485c5490acd2ec6459 http://link.springer.com/article/10.1038/s41598-018-21138-x |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....905dd7b648aab2485c5490acd2ec6459 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20452322 |
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