Enhancement of Light Extraction Efficiency of InGaN Light-Emitting Diodes with an Air-Hole-Array Structure
| العنوان: | Enhancement of Light Extraction Efficiency of InGaN Light-Emitting Diodes with an Air-Hole-Array Structure |
|---|---|
| المؤلفون: | Sy-Hann Chen, Guei-Miao Wang, Zong-Zhe Yang, Yu-Chieh Huang, Chia-Feng Lin |
| المصدر: | Japanese Journal of Applied Physics. 51:01AG05 |
| بيانات النشر: | IOP Publishing, 2012. |
| سنة النشر: | 2012 |
| مصطلحات موضوعية: | Fabrication, Materials science, Physics and Astronomy (miscellaneous), business.industry, General Engineering, General Physics and Astronomy, Electroluminescence, law.invention, Wavelength, Optics, law, Optoelectronics, Array data structure, Current (fluid), business, Layer (electronics), Light-emitting diode, Diode |
| الوصف: | The truncated-conical air-hole (TAH) array structure of an InGaN light-emitting diode (LED) was fabricated on the mesa-edge region to increase the light extraction efficiency. The fabrication consisted of a dry process and a crystallographic wet etching process on the AlN buffer layer to form a truncated-conical air-hole array pattern. The light output power of the TAH-LED structure has a 55% enhancement compared with the conventional LED structure at 20 mA operation current. At 20 mA operation current, the forward voltage and peak electroluminescence wavelength of the TAH-LED were measured to be 3.09 V and 455.6 nm, respectively, similar to those of the conventional LED structure because the truncated-conical air-hole array pattern was fabricated around the mesa-edge region without affecting the current injection area with a top transparent contact layer. |
| تدمد: | 1347-4065 0021-4922 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c1f33184135a5083a78a04f9d147712 https://doi.org/10.7567/jjap.51.01ag05 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....9c1f33184135a5083a78a04f9d147712 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13474065 00214922 |
|---|