Direct laser writing of graded-index SiGe waveguides via phase segregation
العنوان: | Direct laser writing of graded-index SiGe waveguides via phase segregation |
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المؤلفون: | Ozan Aktas, Anna C. Peacock, Mehmet Kaynak, Yuji Yamamoto |
المساهمون: | Molpeceres, Carlos, Qiao, Jie, Narazaki, Aiko |
المصدر: | Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVI. |
بيانات النشر: | SPIE, 2021. |
سنة النشر: | 2021 |
مصطلحات موضوعية: | Fabrication, Materials science, Silicon, business.industry, chemistry.chemical_element, Laser, Silicon-germanium, law.invention, chemistry.chemical_compound, Wavelength, chemistry, law, Phase (matter), Optoelectronics, Continuous wave, Thin film, business |
الوصف: | We report direct laser writing of graded-index optical waveguides via phase segregation in initially homogenous silicongermanium (SiGe) thin films epitaxially-grown on silicon substrates. We used a continuous wave (CW) laser operating at a wavelength of 532 nm. The laser beam was focused to a 5 μm diameter spot on the surface of SiGe films with a thickness of 575 nm and a Ge concentration of %50. Compositional separation of a SiGe film was induced by melting the surface, and the composition profile was tailored by controlling the scan speed of the laser-induced molten zone in a range of 0.1-200 mm/s. At high scan speeds, scanning the laser beam produces a travelling Ge-rich molten zone, where a build-up of Ge content occurs at the trailing edge because of insufficient diffusion-limited Ge transport. Material characterizations have revealed that the laser-processed SiGe microstripes consist of Ge-rich strip cores (> 70% Ge) surrounded by Si-rich under-claddings ( |
وصف الملف: | text |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a754d7ed22609cafcadacb9dcd1b0717 https://doi.org/10.1117/12.2575437 |
حقوق: | OPEN |
رقم الأكسشن: | edsair.doi.dedup.....a754d7ed22609cafcadacb9dcd1b0717 |
قاعدة البيانات: | OpenAIRE |
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