The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design
| العنوان: | The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design |
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| المؤلفون: | Kuo-Jen Chang, Chih-Tien Chen, Hsuan-Ling Kao, Hsiang-Chun Wang, Hsien-Chin Chiu, Chong-Rong Huang, Chia-Hao Liu |
| المصدر: | Electronics, Vol 10, Iss 46, p 46 (2021) Electronics Volume 10 Issue 1 |
| بيانات النشر: | MDPI AG, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Power gain, power gain (fmax), Materials science, Computer Networks and Communications, lcsh:TK7800-8360, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, back barrier (BB) layer, Buffer (optical fiber), law.invention, law, current gain (fT), 0103 physical sciences, Electrical and Electronic Engineering, Electronic band structure, Leakage (electronics), 010302 applied physics, business.industry, Transistor, Doping, lcsh:Electronics, 021001 nanoscience & nanotechnology, Cutoff frequency, Hardware and Architecture, Control and Systems Engineering, conduction band energy, Signal Processing, Optoelectronics, 0210 nano-technology, business |
| الوصف: | In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioff ratio of the BB device was 4.66 × 105, and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-&mu m gate length device with the BB exhibited a high current gain cutoff frequency of 24.4 GHz, and power gain cutoff frequency of 73 GHz. |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 2079-9292 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abbde3c6f30d6f6f4970a3500d0d92cb https://www.mdpi.com/2079-9292/10/1/46 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....abbde3c6f30d6f6f4970a3500d0d92cb |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20799292 |
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