Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
العنوان: | Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 |
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المؤلفون: | Akhil Mauze, Nicholas Valente, Andrei Osinsky, Yuewei Zhang, Fikadu Alema, Takeki Itoh, James S. Speck |
المصدر: | APL Materials, Vol 7, Iss 12, Pp 121110-121110-6 (2019) |
بيانات النشر: | AIP Publishing, 2019. |
سنة النشر: | 2019 |
مصطلحات موضوعية: | 010302 applied physics, Electron mobility, Materials science, lcsh:Biotechnology, General Engineering, Si doped, Analytical chemistry, 02 engineering and technology, Electron, Chemical vapor deposition, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, lcsh:QC1-999, lcsh:TP248.13-248.65, 0103 physical sciences, General Materials Science, Metalorganic vapour phase epitaxy, 0210 nano-technology, lcsh:Physics, Background charge |
الوصف: | We report on record electron mobility values measured in lightly Si doped homoepitaxial β-Ga2O3 grown by metal-organic chemical vapor deposition. The transport properties of the films were studied using temperature-dependent Hall measurements. Numerous (010) β-Ga2O3 layers grown at different conditions showed peak electron mobility exceeding 104 cm2/V s at low temperature (LT), with the highest value of 11 704 cm2/V s at 46 K. The room temperature electron mobilities of the films were between 125 cm2/V s and 160 cm2/V s with the net background charge concentration between ∼5 × 1015 cm−3 and ∼2 × 1016 cm−3. The obtained LT mobility values for β-Ga2O3 were found to be comparable to or higher than the highest LT electron mobilities in bulk SiC and GaN films in the literature. The results demonstrate the capability of metalorganic chemical vapor deposition (MOCVD) for growing high quality ultrapure β-Ga2O3 epitaxial films that are suitable for high power electronic device applications. |
تدمد: | 2166-532X |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abf27eaf4f5f06aa3fdf1bf844edb9bc https://doi.org/10.1063/1.5132954 |
حقوق: | OPEN |
رقم الأكسشن: | edsair.doi.dedup.....abf27eaf4f5f06aa3fdf1bf844edb9bc |
قاعدة البيانات: | OpenAIRE |
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