Nanopyramid-based absorber to boost the efficiency of InGaN solar cells
| العنوان: | Nanopyramid-based absorber to boost the efficiency of InGaN solar cells |
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| المؤلفون: | Walid El Huni, Yacine Halfaya, Houda Ennakrachi, Simon Gautier, Soufiane Karrakchou, Taha Ayari, Ali Ahaitouf, Renaud Puybaret, Matthew B. Jordan, Chris Bishop, Paul L. Voss, Abdallah Ougazzaden, Jean-Paul Salvestrini, Muhammad Arif |
| المساهمون: | Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Signaux Systèmes et Composants (LSSC), Faculté des sciences (Fès), Smith College, Picker Engineering Program, Northampton, IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015) |
| المصدر: | Solar Energy Solar Energy, Elsevier, 2019, 190, pp.93-103. ⟨10.1016/j.solener.2019.07.090⟩ |
| بيانات النشر: | HAL CCSD, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, Design, 020209 energy, 02 engineering and technology, 7. Clean energy, law.invention, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], Planar, law, Electric field, Solar cell, 0202 electrical engineering, electronic engineering, information engineering, General Materials Science, Absorption (electromagnetic radiation), Photocurrent, InGaN, Renewable Energy, Sustainability and the Environment, business.industry, Open-circuit voltage, Doping, Semi-polar plane, 021001 nanoscience & nanotechnology, Polarization charges, Optoelectronics, 0210 nano-technology, business, Short circuit, Nanopyramids, Simulation |
| الوصف: | International audience; InGaN nano-structures, grown using nano selective area growth, have been shown to exhibit high crystalline quality, even for high In content InGaN alloy, and reduced polarization charge effect. They are thus very attractive for the realization of high efficiency solar cells. Compared to planar InGaN absorbers, nanopyramid-based absorbers are shown to relax the usual challenging constraint on the doping of the p-GaN layer, which would be needed to overcome the polarization-induced electric field. NP-based solar cells maintain the same performance with ten times lower p-GaN doping. Furthermore, the SiO2 mask used for selective area growth of the nanopyramids is shown to help trap light into the nanopyramids, leading to increased optical absorption and thus efficiency. Last, InGaN nanopyramid absorber-based solar cells can allow for a higher InGaN residual donor concentration than that of the planar InGaN solar cells. Overall, an optimized In0.3Ga0.7N nanopyramid-based solar cell can lead to an efficiency twice than that of a planar InGaN-based solar cells with standard p- and n-GaN doping level. As a proof of concept, an In0.09Ga0.91N nanopyramid-based solar cell has been fabricated and is shown to have larger short circuit photocurrent and open circuit voltage than a state of the art In0.08Ga0.92N-based planar solar cell. |
| اللغة: | English |
| تدمد: | 0038-092X 1471-1257 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d817dab61805ee38ea286d9d940eb0f9 https://hal.archives-ouvertes.fr/hal-02282639/file/Manuscript_WH.pdf |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....d817dab61805ee38ea286d9d940eb0f9 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 0038092X 14711257 |
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