Tuning electronic properties of graphene heterostructures by amorphous-to-crystalline phase transitions
| العنوان: | Tuning electronic properties of graphene heterostructures by amorphous-to-crystalline phase transitions |
|---|---|
| المؤلفون: | Jaakko Akola, Robert O. Jones, Sampo Kulju, David Prendergast |
| المصدر: | Physical review / B 93(19), 195443 (2016). doi:10.1103/PhysRevB.93.195443 |
| بيانات النشر: | American Physical Society (APS), 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | Phase transition, Materials science, ta114, Condensed matter physics, Band gap, Chalcogenide, Graphene, Heterojunction, Nanotechnology, Fermi energy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, Amorphous solid, Condensed Matter::Materials Science, chemistry.chemical_compound, chemistry, law, 0103 physical sciences, ddc:530, Physics::Chemical Physics, 010306 general physics, 0210 nano-technology, Electronic band structure |
| الوصف: | The remarkable ability of phase change materials (PCM) to switch between amorphous and crystalline states on a nanosecond time scale could provide new opportunities for graphene engineering. We have used density functional calculations to investigate the structures and electronic properties of heterostructures of thin amorphous and crystalline films of the PCM GeTe (16 \AA{} thick) and ${\mathrm{Ge}}_{2}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{5}$ (20 \AA{}) between graphene layers. The interaction between graphene and PCM is very weak, charge transfer is negligible, and the structures of the chalcogenide films differ little from those of bulk phases. A crystalline GeTe (111) layer induces a band gap opening of 80 meV at the Dirac point. This effect is absent for the amorphous film, but the Fermi energy shifts down along the Dirac cone by $\ensuremath{-}60$ meV. ${\mathrm{Ge}}_{2}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{5}$ shows similar features, although inherent disorder in the crystalline rocksalt structure reduces the contrast in band structure from that in the amorphous structure. These features originate in charge polarization within the crystalline films, which show electromechanical response (piezoelectricity) upon compression, and show that the electronic properties of graphene structures can be tuned by inducing ultrafast structural transitions within the chalcogenide layers. Graphene can also be used to manipulate the structural state of the PCM layer and its electronic and optical properties. |
| تدمد: | 2469-9969 2469-9950 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dda40a07d60d1a6e2f3e0714a6a4b7e3 https://doi.org/10.1103/physrevb.93.195443 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....dda40a07d60d1a6e2f3e0714a6a4b7e3 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 24699969 24699950 |
|---|