Even-denominator fractional quantum Hall physics in ZnO
| العنوان: | Even-denominator fractional quantum Hall physics in ZnO |
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| المؤلفون: | Joseph Falson, B. Friess, Jurgen H. Smet, Atsushi Tsukazaki, Ding Zhang, Yusuke Kozuka, Masashi Kawasaki, D. Maryenko |
| المصدر: | Nature Physics. 11:347-351 |
| بيانات النشر: | Springer Science and Business Media LLC, 2015. |
| سنة النشر: | 2015 |
| مصطلحات موضوعية: | Physics, Condensed matter physics, Quantum point contact, General Physics and Astronomy, Macroscopic quantum phenomena, Heterojunction, Quantum Hall effect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter::Materials Science, Quantum spin Hall effect, Quantum mechanics, Fractional quantum Hall effect, Composite fermion, Topological order |
| الوصف: | The fractional quantum Hall (FQH) effect emerges in high-quality two-dimensional electron systems exposed to a magnetic field when the Landau-level filling factor, ν_e, takes on a rational value. Although the overwhelming majority of FQH states have odd-denominator fillings, the physical properties of the rare and fragile even-denominator states are most tantalizing in view of their potential relevance for topological quantum computation. For decades, GaAs has been the preferred host for studying these even-denominator states, where they occur at ν_e = 5/2 and 7/2. Here we report an anomalous series of quantized even-denominator FQH states outside the realm of III–V semiconductors in the MgZnO/ZnO 2DES electron at ν_e = 3/2 and 7/2, with precursor features at 9/2; all while the 5/2 state is absent. The effect in this material occurs concomitantly with tunability of the orbital character of electrons at the chemical potential, thereby realizing a new experimental means for investigating these exotic ground states. |
| وصف الملف: | application/pdf |
| تدمد: | 1745-2481 1745-2473 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9148019fa9bad4bb2a70fd9eb4852f3 https://doi.org/10.1038/nphys3259 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....e9148019fa9bad4bb2a70fd9eb4852f3 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 17452481 17452473 |
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