تقرير
Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots
| العنوان: | Origin of the Broad Lifetime Distribution of Localized Excitons in InGaN/GaN Quantum Dots |
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| المؤلفون: | Winkelnkemper, M., Dworzak, M., Bartel, T. P., Strittmatter, A., Hoffmann, A., Bimberg, D. |
| سنة النشر: | 2008 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees well with recently published single-QD time-resolved PL measurements. Using eight-band k.p modelling, we show that the built-in piezo- and pyroelectric fields within the QDs cause a sensitive dependence of the radiative lifetimes on the exact QD geometry and composition. Moreover, the radiative lifetimes also depend heavily on the composition of the direct surrounding of the QDs. A broad lifetime distribution occurs even for moderate variations of the QD structure. Thus, for unscreened fields a multi-exponential decay of the ensemble PL is generally expected in this material system. Comment: 5 pages, 4 figures. accepted at Physica Status Solidi |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1002/pssb.200844129 |
| URL الوصول: | http://arxiv.org/abs/0807.5056 |
| رقم الأكسشن: | edsarx.0807.5056 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1002/pssb.200844129 |
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