تقرير
Self-compensation in highly n-type InN
| العنوان: | Self-compensation in highly n-type InN |
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| المؤلفون: | Rauch, C., Tuomisto, F., King, P. D. C., Veal, T. D., Lu, H., Schaff, W. J. |
| سنة النشر: | 2012 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Other Condensed Matter |
| الوصف: | Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples. Comment: 5 pages, 3 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/1.4732508 |
| URL الوصول: | http://arxiv.org/abs/1204.3299 |
| رقم الأكسشن: | edsarx.1204.3299 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/1.4732508 |
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