تقرير
Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation
| العنوان: | Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation |
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| المؤلفون: | Picollo, F., Olivero, P., Bellotti, F., Pastuović, Ž., Skukan, N., Giudice, A. Lo, Amato, G., Jakšić, M., Vittone, E. |
| المصدر: | Diamond and Related Materials 19 (5-6), 466-469 (2010) |
| سنة النشر: | 2016 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions. Comment: 19 pages, 5 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1016/j.diamond.2010.01.005 |
| URL الوصول: | http://arxiv.org/abs/1609.06176 |
| رقم الأكسشن: | edsarx.1609.06176 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1016/j.diamond.2010.01.005 |
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