تقرير
Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions
| العنوان: | Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions |
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| المؤلفون: | Dang, T. Huong, To, D. Quang, Erina, E., Nguyen, T. L. Hoai, Safarov, V., Jaffres, H., Drouhin, H. -J. |
| سنة النشر: | 2017 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect. Comment: 6 pages, 3 figures, conference MIMS 2017 Moscow (submitted), Journal of Magnetism and Magnetic Materials (JMMM), 2017 |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1016/j.jmmm.2017.12.065 |
| URL الوصول: | http://arxiv.org/abs/1707.07917 |
| رقم الأكسشن: | edsarx.1707.07917 |
| قاعدة البيانات: | arXiv |
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