تقرير
Contact-induced doping in aluminum-contacted molybdenum disulfide
| العنوان: | Contact-induced doping in aluminum-contacted molybdenum disulfide |
|---|---|
| المؤلفون: | Shimazu, Y., Arai, K., Iwabuchi, T. |
| المصدر: | Jpn. J. Appl. Phys. 57, 015801 (2018) |
| سنة النشر: | 2017 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | The interface between two-dimensional semiconductors and metal contacts is an important topic of research of nanoelectronic devices based on two-dimensional semiconducting materials such as molybdenum disulfide (MoS2). We report transport properties of thin MoS2 flakes in a field-effect transistor geometry with Ti/Au and Al contacts. In contrast to widely used Ti/Au contacts, the conductance of flakes with Al contacts exhibits a smaller gate-voltage dependence, which is consistent with a substantial electron doping effect of the Al contacts. The temperature dependence of two-terminal conductance for the Al contacts is also considerably smaller than for the Ti/Au contacts, in which thermionic emission and thermally assisted tunneling play a dominant role. This result is explained in terms of the assumption that the carrier injection mechanism at an Al contact is dominated by tunneling that is not thermally activated. Comment: 17 pages, 9 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.7567/JJAP.57.015801 |
| URL الوصول: | http://arxiv.org/abs/1712.05628 |
| رقم الأكسشن: | edsarx.1712.05628 |
| قاعدة البيانات: | arXiv |
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